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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD523 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min.) *High DC Current Gain: hFE= 1000(Min.)@IC= 3A *Low Collector Saturation Voltage: VCE (sat)= 1.5V(Max.)@ IC= 3A APPLICATIONS *Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continunous Base Current-Continunous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range w w scs .i w VALUE 80 80 5 7 0.2 50 150 -65~+150 UNIT V .cn mi e V V A A W PC Tj Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD523 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA B 1.5 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA B 2.5 V ICBO Collector Cutoff Current VCE= 80V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain Switching Times ton Turn-on Time w w scs .i w IC= 3A, VCE= 3V IC= 7A, VCE= 3V .cn mi e 2000 1000 0.8 3.0 2.5 3.0 mA 15000 s tstg Storage Time IC= 3A, IB1= -IB2=6mA; VCC= 45V; RL= 15 s tf Fall Time s isc Websitewww.iscsemi.cn |
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